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Proceedings Paper

Optical spectroscopy as a monitor of thin film growth in sputtering
Author(s): Noemi Abundiz; Angeles Perez; Víctor García; Roberto Machorro
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Paper Abstract

Line intensity ratio has been used in astronomy to calculate plasma density and temperature. This procedure is applied to monitor thin film growth in plasma-assisted deposition, it provides very useful information such as density and temperature of the plasma. The propose of this study is monitor variations of the plasma during deposition, using wide field optical spectroscopy and establish a relation with thin film stoichiometry. We report the preparation of inhomogeneous SiOxNy thin films, by sputtering.

Paper Details

Date Published: 2 November 2011
PDF: 9 pages
Proc. SPIE 8011, 22nd Congress of the International Commission for Optics: Light for the Development of the World, 80112N (2 November 2011); doi: 10.1117/12.902029
Show Author Affiliations
Noemi Abundiz, Univ. Nacional Autónoma de México (Mexico)
Ctr. de Investigación Científica y de Educación Superior de Ensenada (Mexico)
Angeles Perez, Univ. Autónoma de Baja California (Mexico)
Víctor García, Univ. Nacional Autónoma de México (Mexico)
Roberto Machorro, Univ. Nacional Autónoma de México (Mexico)


Published in SPIE Proceedings Vol. 8011:
22nd Congress of the International Commission for Optics: Light for the Development of the World
Ramón Rodríguez-Vera; Ramón Rodríguez-Vera; Ramón Rodríguez-Vera; Rufino Díaz-Uribe; Rufino Díaz-Uribe; Rufino Díaz-Uribe, Editor(s)

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