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Proceedings Paper

270GHz SiGe BiCMOS manufacturing process platform for mmWave applications
Author(s): Arjun Kar-Roy; Edward J. Preisler; George Talor; Zhixin Yan; Roger Booth; Jie Zheng; Samir Chaudhry; David Howard; Marco Racanelli
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Paper Abstract

TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

Paper Details

Date Published: 13 October 2011
PDF: 15 pages
Proc. SPIE 8188, Millimetre Wave and Terahertz Sensors and Technology IV, 81880F (13 October 2011); doi: 10.1117/12.901659
Show Author Affiliations
Arjun Kar-Roy, TowerJazz (United States)
Edward J. Preisler, TowerJazz (United States)
George Talor, TowerJazz (United States)
Zhixin Yan, TowerJazz (United States)
Roger Booth, TowerJazz (United States)
Jie Zheng, TowerJazz (United States)
Samir Chaudhry, TowerJazz (United States)
David Howard, TowerJazz (United States)
Marco Racanelli, TowerJazz (United States)


Published in SPIE Proceedings Vol. 8188:
Millimetre Wave and Terahertz Sensors and Technology IV
Keith A. Krapels; Neil Anthony Salmon; Eddie Jacobs, Editor(s)

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