Share Email Print
cover

Proceedings Paper

Ultrafast photoluminescence features analysis of In-doped ZnO nanowires
Author(s): Qingming Zhao
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

ZnO has been researched for its excellent properties for optoelectronic, sensing, piezoelectric application, solar cells, light emitting diodes and laser diodes. Transparent oxide semiconductor (TOS) thin films made of ZnO nanocomposites, which are used as transparent electrodes in optoelectronic devices, have been widely reported. Among the TOSs, the thin films of a homologous compound, with a so-called superlattice structure have attracted considerable interest. Because of the spatial confinement of conductive electrons in the two dimensional layer, their interesting electronic, optical, and magnetic properties, along with small size and chemical reactivity, have led to a wide range of applications in nano-optoelectronics, medical diagnostics, catalysis, and chemical sensing. In this paper, the ultrafast dynamics and the nonlinear optical response of metal nanocomposites were investigated. Heat treatment has been proven to be a feasible way to improve the performance of ultrafast response for this kind of materials. Based on the experimental results of In-doped ZnO materials excited by intense fs pulses near 800 nm, nonlinear optical effects that may emerge under an intense field are attributed to be responsible for the efficient two-photon absorption process under detuned excitation.

Paper Details

Date Published: 8 September 2011
PDF: 6 pages
Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 819128 (8 September 2011); doi: 10.1117/12.901068
Show Author Affiliations
Qingming Zhao, Harbin Normal Univ. (China)


Published in SPIE Proceedings Vol. 8191:
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies

© SPIE. Terms of Use
Back to Top