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Proceedings Paper

The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage
Author(s): Daming Zhou; Wangping Wang; Ning Li; Bo Zhang; Xiaoshuang Chen; Wei Lu
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Paper Abstract

The light response mechanism of quantum dot resonant tunneling diode (QDRTD) has been investigated experimentally. The QDRTD is constructed by an InAs layer of self-assembled quantum-dots (QDs) being placed on the top of AlAs barrier layer. The work bias of the device is set in the positive differential resistance region. It is found that the charging InAs quantum dots can effectively control the carrier transport properties of the device. The photo-excited holes can lower the electrostatic energy of the quantum dot state. Thus, the electrons in the emitter can easily tunnel to the collector, and the current increases under illumination. It is found that the increment (or decrement) of photocurrent depends on the amount of photo-excited holes captured in the dots. Furthermore, due to the quantum multiplication effect, the QDRTD can be applied as a photon counting device.

Paper Details

Date Published: 8 September 2011
PDF: 6 pages
Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 81911R (8 September 2011); doi: 10.1117/12.900814
Show Author Affiliations
Daming Zhou, Shanghai Institute of Technical Physics (China)
Shanghai Advanced Research Institute (China)
Wangping Wang, Shanghai Institute of Technical Physics (China)
Ning Li, Shanghai Institute of Technical Physics (China)
Bo Zhang, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8191:
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies
Yuelin Wang; Huikai Xie; Yufeng Jin, Editor(s)

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