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Proceedings Paper

Study of the characteristics of VLWIR HgCdTe photovoltaic detectors in variable-area diode test structures
Author(s): Xiaohui Xie; Hua Hua; Guangyin Qiu; Qingjun Liao; Xiaoning Hu
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Paper Abstract

This paper aims to analysis the characteristics of VLWIR HgCdTe detectors with n-on-p implanted planar junction. We use the variable area test structures, which are used as an important tool to access the quality of the material, process and surface passivation in HgCdTe device technology. Through analyzing the relation between the inverse of the zero-bias resistance-area product of a diode and its perimeter-to-area ratio, we can distinguish the contributions of bulk and surface effects, and calculate the minority carrier diffusion length, which can reflect the conditions of the HgCdTe epitaxy. According to the results, we find the VLWIR HgCdTe detectors have abnormal current-voltage phenomenon at a low temperature, which may be the results of a parasite p-n junction. Besides, through data analysis and curves fitting, we find the surface current of the VLWIR HgCdTe diodes at 80K is nearly comparable with the bulk current.

Paper Details

Date Published: 8 September 2011
PDF: 7 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 819335 (8 September 2011); doi: 10.1117/12.900711
Show Author Affiliations
Xiaohui Xie, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Hua Hua, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Guangyin Qiu, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Qingjun Liao, Shanghai Institute of Technical Physics (China)
Xiaoning Hu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

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