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Proceedings Paper

Readout on the resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector
Author(s): Fang-min Guo; Yong-pan Wang; Feng Mao; Zheng-qi Zheng; Jun-hao Chu
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Paper Abstract

Focused on high sensitivity property of the resonant-cavity-enhanced InGaAs/GaAs quantum dots photodetector, the wide dynamic range readout was demanded and designed. The Capacitive Trans-Impedance Amplifier (CTIA) readout structure having bias stability and good linearity compared the characteristic of the Self-Integrated (SI) readout structures is more suitable for the quantum dots photodetector. However, the CTIA structure needs to expand readout dynamic range for effective photoelectric conversion signal output of the novel photodetector. Through the different integration capacitor readout experimental comparison and analysis, a readout structure whose low noise amplification gain could be automatically adjusted was designed, the output dynamic range extended to over 90dB, and the signal to noise and sensitivity of the output signal have been significantly improved.

Paper Details

Date Published: 18 August 2011
PDF: 9 pages
Proc. SPIE 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, 81942G (18 August 2011); doi: 10.1117/12.900689
Show Author Affiliations
Fang-min Guo, East China Normal Univ. (China)
Yong-pan Wang, East China Normal Univ. (China)
Feng Mao, East China Normal Univ. (China)
Zheng-qi Zheng, East China Normal Univ. (China)
Jun-hao Chu, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 8194:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications
Makoto Ikeda; Nanjian Wu; Guangjun Zhang; Kecong Ai, Editor(s)

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