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Proceedings Paper

Temporal differential CMOS image sensor for low-light and high-speed applications
Author(s): Ning Guan; Xu Zhang; Zan Dong; Wei Wang; Yun Gui; Jianqiang Han; Yuan Wang; Beiju Huang; Hongda Chen
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Paper Abstract

A new structure of pixels of CMOS image sensors is presented in this article. With multiple layers of metal, it is possible to separate control pins of adjacent pixels. These separated control pins make it possible to overlap exposure time of these pixels. After recovering information with temporal difference from the raw data of overlapping exposure, the temporal resolution can be smaller than the exposure time. This kind of pixels can be used in low-light or high-speed applications where the choices of exposure time is limited.

Paper Details

Date Published: 18 August 2011
PDF: 6 pages
Proc. SPIE 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, 81942F (18 August 2011); doi: 10.1117/12.900682
Show Author Affiliations
Ning Guan, Institute of Semiconductors (China)
Xu Zhang, Institute of Semiconductors (China)
Zan Dong, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)
Yun Gui, Institute of Semiconductors (China)
Jianqiang Han, Institute of Semiconductors (China)
Yuan Wang, Institute of Semiconductors (China)
Beiju Huang, Institute of Semiconductors (China)
Hongda Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 8194:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications
Makoto Ikeda; Nanjian Wu; Guangjun Zhang; Kecong Ai, Editor(s)

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