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Proceedings Paper

Anomalous hall effect in arsenic-doped HgCdTe grown by Te-rich LPE
Author(s): Guang-Yin Qiu; Chuan-Jie Zhang; Yan-Feng Wei; Xiao-Jing Chen; Qing-Qing Xu; Jian-Rong Yang
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Paper Abstract

The Hall Effect and resistivity of arsenic-doped HgCdTe epilayers grown by Te-rich liquid phase epitaxy (Te-rich LPE) have been measured in the temperature range between 20 and 300 K at a magnetic field of 2 kG. Some arsenic-doped HgCdTe layers show anomalous n-type characteristic after activation annealing. A simplified two-layer model is applied to describe the anomalous Hall Effect of the arsenic-doped HgCdTe layers. The results show that the anomalous characteristic of the epilayers is due to the n-type layer in the surface, which may be caused by the surface oxidation. Based on the model, a computer program is applied to fit the experimental curves of Hall parameters. The results show that the Hall parameters primarily depend on the charge density of the n-type surface layer. The theoretical curves based on the model are consistent well with the experimental data.

Paper Details

Date Published: 8 September 2011
PDF: 7 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932Z (8 September 2011); doi: 10.1117/12.900672
Show Author Affiliations
Guang-Yin Qiu, Shanghai Institute of Technical Physics (China)
Chuan-Jie Zhang, Shanghai Institute of Technical Physics (China)
Yan-Feng Wei, Shanghai Institute of Technical Physics (China)
Xiao-Jing Chen, Shanghai Institute of Technical Physics (China)
Qing-Qing Xu, Shanghai Institute of Technical Physics (China)
Jian-Rong Yang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications

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