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Proceedings Paper

Photoelectron characteristics of HgInTe detector
Author(s): L. Zhang; X. L. Zhang; W. G. Sun; Z. X. Lu
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Paper Abstract

We present the high performance of Hg3In2Te6 metal-semiconductor photodetectors using Indium tin oxide (ITO) as the schottky electrodes by vacuum magnetron sputtering.There is a interfacial oxide layer formation by oxygen plasma process between Indium tin oxide (ITO) and Hg3In2Te6 semiconductor compound to change schottky barrier. The effects of oxygen plasma treatment on Hg3In2Te6 surface property were studied. Under optimized condition, the surface of Hg3In2Te6 is oxidated resulting in decreasing reverse dark current and increasing breakdown voltage, while the barrier height increases from 0.5 to 0.58eV. This method is simple to fabricate high performance HgInTe devices.

Paper Details

Date Published: 8 September 2011
PDF: 7 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932X (8 September 2011); doi: 10.1117/12.900600
Show Author Affiliations
L. Zhang, Luoyang Optoelectronic Technology Development Ctr. (China)
X. L. Zhang, Luoyang Optoelectronic Technology Development Ctr. (China)
W. G. Sun, Luoyang Optoelectronic Technology Development Ctr. (China)
Z. X. Lu, Luoyang Optoelectronic Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications

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