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Proceedings Paper

Fabrication of ultrathin silicon PIN detector
Author(s): Min Yu; Xianshan Dong; Ying Li; Dayu Tian; Jinyan Wang; Yufeng Jin
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Paper Abstract

Ultra-thin silicon PIN detectors are applied widely in nuclear physics experiments and space exploration. It is used in ΔE-E telescope system as the ΔE detector to detect the energy loss of high energy particles so that to identify the charge and mass of the particle. The ΔE detector is required to be very thin(<50μm) in order to let low energy particles to go through the ΔE detector and enter the followed E detector. The fabrication of ultra-thin silicon detector is very difficult and challenging due to the fragility of the ultra-thin silicon membrane considering that the area of the detector is required to as large as 10~100 mm2. Several different technologies have been proposed to fabricate the ultra-thin silicon PIN detector, such as back side locally thinning of the high resistivity silicon wafer, application of the SOI technology or wafer thinning and bonding technology. The monolithic ΔE-E detector telescope technology has also been proposed. In this talk we review the development of ultra-thin silicon PIN detector technology including our research work.

Paper Details

Date Published: 8 September 2011
PDF: 4 pages
Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 819103 (8 September 2011); doi: 10.1117/12.900555
Show Author Affiliations
Min Yu, Peking Univ. (China)
Xianshan Dong, Peking Univ. (China)
Ying Li, Peking Univ. (China)
Dayu Tian, Peking Univ. (China)
Jinyan Wang, Peking Univ. (China)
Yufeng Jin, Peking Univ. (China)


Published in SPIE Proceedings Vol. 8191:
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies
Yuelin Wang; Huikai Xie; Yufeng Jin, Editor(s)

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