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Proceedings Paper

Nonlinear free-carrier velocity induced by intense terahertz pulse in photoexcited semiconductor materials
Author(s): F. H. Su; G. Sharma; F. Blanchard; L. Razzari; A. Ayesheshim; R. Morandotti; T. Ozaki; F. A. Hegmann
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Paper Abstract

The transient absorption bleaching and velocity overshoot of photoexcited carriers in GaAs and Si have been observed by the intense few-circle terahertz (THz) probe pulse in the optical pump-terahertz probe (OPTP) configuration. The free-carrier THz nonlinearity is attributed to the transient electron redistribution in conduction band induced by the strong THz electric field component.

Paper Details

Date Published: 11 August 2011
PDF: 8 pages
Proc. SPIE 8195, International Symposium on Photoelectronic Detection and Imaging 2011: Terahertz Wave Technologies and Applications, 81950T (11 August 2011); doi: 10.1117/12.900526
Show Author Affiliations
F. H. Su, Key Lab. of Materials Physics (China)
G. Sharma, Énergie, Matériaux et Télécommunications, INRS, Univ. du Québec (Canada)
F. Blanchard, Énergie, Matériaux et Télécommunications, INRS, Univ. du Québec (Canada)
L. Razzari, Énergie, Matériaux et Télécommunications, INRS, Univ. du Québec (Canada)
Univ. di Pavia (Italy)
A. Ayesheshim, Univ. of Alberta (Canada)
R. Morandotti, Énergie, Matériaux et Télécommunications, INRS, Univ. du Québec (Canada)
T. Ozaki, Énergie, Matériaux et Télécommunications, INRS, Univ. du Québec (Canada)
F. A. Hegmann, Univ. of Alberta (Canada)


Published in SPIE Proceedings Vol. 8195:
International Symposium on Photoelectronic Detection and Imaging 2011: Terahertz Wave Technologies and Applications
X.-C. Zhang; Jianquan Yao; Cunlin Zhang; Zhenzhan Wang, Editor(s)

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