Share Email Print
cover

Proceedings Paper

Effects of thermal annealing on HgCdTe/CdTe/Si(211) by MBE
Author(s): Chuan Shen; Renjie Gu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, the effects of thermal annealing (TA) were studied by theoretical calculation and experiment. The calculation was based on the Masafumi's model of dislocation movement, modified with thermal stress and lattice-mismatch in the HgCdTe/CdTe/Si(211) heterostructure. As the calculation indicated, the temperature and holding time of TA had great effect on the dislocation reduction, while less improvement with the epilayer thickness and growth orientation. Upon the result of calculation, the TA and thermal cycle annealing (TCA) experiments were performed under different conditions, which fit the calculation properly. The dislocation reduction of TA was investigated by double crystal X-ray rocking curve (DCRC) and etch pit density (EPD) measurements. The EPD of 10μm SW~LW HgCdTe/Si under optimized thermal process could be decreased half order of magnitude, with the lowest EPD at 2×106 cm-2, as well as the full width at half maximum (FWHM) of the DCRC to 57.8 arcsec.

Paper Details

Date Published: 8 September 2011
PDF: 7 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932P (8 September 2011); doi: 10.1117/12.900514
Show Author Affiliations
Chuan Shen, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Renjie Gu, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

© SPIE. Terms of Use
Back to Top