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Proceedings Paper

Research on I-V temperature characteristic for InSb IRFPA
Author(s): Qiang Guo; Jun-ming Liu; Wei Wang; Jun-jie Si; Jing Wang
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Paper Abstract

I-V temperature characteristic is very important to InSb IRFPA. In order to make further studies on I-V temperature characteristic, some experiments were done. In the experiments, the operating temperature of the InSb array was gradually raised from 77k. It is shown that reverse current doesn't simply increase with the increase of the operating temperature. The reason can be attributed to the composing of reverse currents at different operating temperature. In this paper, the I-V characteristic of InSb diode at different operating temperature is briefly described. The dominant components of reverse current and its temperature characteristic are discussed. The change of detector impedance is analyzed as operating temperature is changed. At the same time, the optimized operating temperature of InSb IRFPA is presented. The limit of operating temperature at which InSb IRFPA can work normally is also given.

Paper Details

Date Published: 8 September 2011
PDF: 6 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932O (8 September 2011); doi: 10.1117/12.900503
Show Author Affiliations
Qiang Guo, Luoyang Opto-electro Technology Development Ctr. (China)
Jun-ming Liu, Luoyang Opto-electro Technology Development Ctr. (China)
Wei Wang, Luoyang Opto-electro Technology Development Ctr. (China)
Jun-jie Si, Luoyang Opto-electro Technology Development Ctr. (China)
Jing Wang, Luoyang Opto-electro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

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