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Proceedings Paper

Response characteristic of InSb IRFPA under high reverse bias condition
Author(s): Jun-ming Liu; Qiang Guo; Wei Wang; Zhen-yu Peng
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Paper Abstract

Infrared Focal Plane Array (IRFPA) of InSb is designed to work under the condition of zero bias voltage or nearly to zero bias voltage. InSb IRFPA can't work normally if PN junction is in the condition of high reverse bias voltage for several minutes. In order to analyze the causation of the phenomena some experiments were designed to simulate the condition of high reverse bias voltage. It is found that when the reverse bias voltage exceeds the limited value, the responsibility of InSb detector becomes lower. The phenomena will not change unless the operating temperature is raised to room temperature and kept for a long time. Response characteristic of InSb PN junction under high reverse bias voltage is briefly described in this paper. The factors affecting response characteristic are discussed. The limited value of the reverse voltage is given. The result is useful to design the driving circuit of InSb IPFPA. It also plays the guidance part in application of InSb detector.

Paper Details

Date Published: 8 September 2011
PDF: 6 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932C (8 September 2011); doi: 10.1117/12.900335
Show Author Affiliations
Jun-ming Liu, Luoyang Opto-electro Technology Development Ctr. (China)
Qiang Guo, Luoyang Opto-electro Technology Development Ctr. (China)
Wei Wang, Luoyang Opto-electro Technology Development Ctr. (China)
Zhen-yu Peng, Luoyang Opto-electro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

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