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Proceedings Paper

III-nitride intersubband photonics
Author(s): Salam Sakr; Maria Tchernycheva; Juliette Mangeney; Elias Warde; Nathalie Isac; Lorenzo Rigutti; Raffaele Colombelli; Anatole Lupu; Laurent Vivien; François H. Julien; Alon Vardi; Schmuel E. Schacham; Gad Bahir; Yulia Kotsar; Eva Monroy; Etienne Giraud; Denis Martin; Nicolas Grandjean
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Paper Abstract

This paper reviews the recent progress towards III-nitride intersubband devices based on quantum wells. We first present recent achievements in terms of GaN-based quantum cascade detectors operating at near-infrared wavelengths. We show that these devices are intrinsically extremely fast based on femtosecond time-resolved measurements of the photocurrent. The design of III-nitride quantum cascade detectors, which relies on the engineering of the internal electric field, is flexible enough to allow for two-color detection. We finally discuss the potential of III-nitride intersubband devices in the THz frequency domain and present the recent observation of THz absorption using low aluminium content AlGaN/GaN step quantum wells.

Paper Details

Date Published: 1 March 2012
PDF: 10 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621Q (1 March 2012); doi: 10.1117/12.900002
Show Author Affiliations
Salam Sakr, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Maria Tchernycheva, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Juliette Mangeney, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Elias Warde, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Nathalie Isac, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Lorenzo Rigutti, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Raffaele Colombelli, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Anatole Lupu, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Laurent Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
François H. Julien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Alon Vardi, Technion-Israel Institute of Technology (Israel)
Schmuel E. Schacham, Technion-Israel Institute of Technology (Israel)
Gad Bahir, Technion-Israel Institute of Technology (Israel)
Yulia Kotsar, Nanophysique et Semiconducteurs, CEA-Grenoble (France)
Eva Monroy, Nanophysique et Semiconducteurs, CEA-Grenoble (France)
Etienne Giraud, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Denis Martin, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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