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Proceedings Paper

22nm node ArF lithography performance improvement by utilizing mask 3D topography: controlled sidewall angle
Author(s): Hiroshi Watanabe; Kei Mesuda; Katsuya Hayano; Eiji Tsujimoto; Hideyoshi Takamizawa; Toshio Ohhashi; Naruo Sakasai; Shintaro Kudo; Tomoyuki Matsuyama
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Paper Abstract

To improve lithography performance, resolution enhancement technique (RET) such as source mask optimization (SMO) will be applied to 22 nm node and beyond. We examine if lithography performance is improved by altering mask 3D topography. In this paper, we report that we have confirmed what topography is effective for lithography performance improvement in the dense region of 22nm technology node. Since shadowing effect is strong at the dense region, we focus on sidewall angle that decreases shadowing effect. As a basic analysis, we evaluate maximum exposure latitude (EL) and mask error enhancement factor (MEEF) of mask 3D topographic patterns that have various sidewall angles by 3D rigorous simulator. This result shows the increasing of maximum exposure latitude when changing sidewall angle. As a next step, we fabricate a test mask which has optimized sidewall angle and the exposure is performed on NA1.30 immersion scanner (Nikon NSR-S610C). Then we compare wafer printing results and simulation results. These results induce that the optimization of mask 3D topography has a potential to improve lithographic performance.

Paper Details

Date Published: 20 May 2011
PDF: 10 pages
Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 808108 (20 May 2011); doi: 10.1117/12.899910
Show Author Affiliations
Hiroshi Watanabe, Dai Nippon Printing Co., Ltd. (Japan)
Kei Mesuda, Dai Nippon Printing Co., Ltd. (Japan)
Katsuya Hayano, Dai Nippon Printing Co., Ltd. (Japan)
Eiji Tsujimoto, Dai Nippon Printing Co., Ltd. (Japan)
Hideyoshi Takamizawa, Dai Nippon Printing Co., Ltd. (Japan)
Toshio Ohhashi, Nikon Corp. (Japan)
Naruo Sakasai, Nikon Corp. (Japan)
Shintaro Kudo, Nikon Corp. (Japan)
Tomoyuki Matsuyama, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 8081:
Photomask and Next-Generation Lithography Mask Technology XVIII
Toshio Konishi, Editor(s)

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