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Proceedings Paper

Developing a second generation Laue lens prototype: high-reflectivity crystals and accurate assembly
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Paper Abstract

Laue lenses are an emerging technology that will enhance gamma-ray telescope sensitivity by one to two orders of magnitude in selected energy bands of the ~100 keV to ~1.5 MeV range. This optic would be particularly well adapted to the observation of faint gamma ray lines, as required for the study of Supernovae and Galactic positron annihilation. It could also prove very useful for the study of hard X-ray tails from a variety of compact objects, especially making a difference by providing sufficient sensitivity for polarization to be measured by the focal plane detector. Our group has been addressing the two key issues relevant to improve performance with respect to the first generation of Laue lens prototypes: obtaining large numbers of efficient crystals and developing a method to fix them with accurate orientation and dense packing factor onto a substrate. We present preliminary results of an on-going study aiming to enable a large number of crystals suitable for diffraction at energies above 500 keV. In addition, we show the first results of the Laue lens prototype assembled using our beamline at SSL/UC Berkeley, which demonstrates our ability to orient and glue crystals with accuracy of a few arcsec, as required for an efficient Laue lens telescope.

Paper Details

Date Published: 12 October 2011
PDF: 10 pages
Proc. SPIE 8147, Optics for EUV, X-Ray, and Gamma-Ray Astronomy V, 81471D (12 October 2011); doi: 10.1117/12.899893
Show Author Affiliations
Nicolas M. Barrière, Univ. of California, Berkeley (United States)
John A. Tomsick, Univ. of California, Berkeley (United States)
Steven E. Boggs, Univ. of California, Berkeley (United States)
Alexander Lowell, Univ. of California, Berkeley (United States)
Peter von Ballmoos, Institut de Recherche en Astrophysique et Planetologie (France)


Published in SPIE Proceedings Vol. 8147:
Optics for EUV, X-Ray, and Gamma-Ray Astronomy V
Stephen L. O'Dell; Giovanni Pareschi, Editor(s)

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