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Proceedings Paper

As2/Ga flux ratios and low-temperature annealing dependence of Ga1-xMnxAs films by x-ray absorption spectroscopy
Author(s): X. C. Cao; G. S. Yao; L. X. Zhang; L. W. Wang; Y. Q. Lv; Z. Y. Peng
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Paper Abstract

We have measured room temperature x-ray absorption spectroscopy (XAS) at the Mn L2,3edges on ferromagnetic Ga1-xMnxAs films prepared under different As2/Ga flux ratios. A growth condition relative energy shift (ΔE) at L2 peak was observed, the results suggest that the formation of antiferromagnetic Mn-As complex under As-rich growth conditions and the energy shift can be weakened even eliminated by post-growth low temperature (LT) annealing. The intensity of XAS spectrum was promoted after post-growth annealing, and the effect of annealing was also influenced by growth conditions.

Paper Details

Date Published: 8 September 2011
PDF: 10 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81931F (8 September 2011); doi: 10.1117/12.899858
Show Author Affiliations
X. C. Cao, Luoyang Optoelectronic Institute (China)
G. S. Yao, Luoyang Optoelectronic Institute (China)
L. X. Zhang, Luoyang Optoelectronic Institute (China)
L. W. Wang, Luoyang Optoelectronic Institute (China)
Y. Q. Lv, Luoyang Optoelectronic Institute (China)
Z. Y. Peng, Luoyang Optoelectronic Institute (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications

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