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Proceedings Paper

Mechanism and implementation of bidirectional IR scene simulation system based on the Peltier effect
Author(s): Yun-song Feng; Yuan Lu; Jia Shen
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Paper Abstract

The IR scene simulation technique is an effective method to test the responsivity, the precision and the anti-interference capability of the IR detector during its research and development; thus the technique may reduce the cost and research time. Currently, the IR scene simulation technique based on MOS-Resistance arrays is one of the most popular IR scene simulation techniques. However, resistance arrays can only be heated, but not refrigerated. Moreover, other simulation techniques also have the problem of one-direction IR scene simulation. In this paper, the IR simulation mechanism is studied in detail. According to the analysis of the characteristic of the semiconductor device based on the Peltier effect , the bidirectional IR scene simulation technique based on semiconductor refrigeration device with the Peltier effect and the computer controlling technology is put forward. Moreover, a prototype machine is designed ,and the shortcoming of the IR scene simulation system based on MOS-Resistance arrays which can only be heated is avoided. Finally, the performance of the prototype machine is tested by experiments. The results show that the system can realize bidirectional IR scene simulation perfectly by the means of increasing and reducing the temperature.

Paper Details

Date Published: 8 September 2011
PDF: 7 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81931A (8 September 2011); doi: 10.1117/12.899659
Show Author Affiliations
Yun-song Feng, Electronic Engineering Institute (China)
Yuan Lu, Electronic Engineering Institute (China)
Jia Shen, Electronic Engineering Institute (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

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