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Proceedings Paper

A theoretical structure calculation of MWIR HgCdTe e-APD
Author(s): Ren-jie Gu; Chuan Shen; Lu Chen
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Paper Abstract

A theoretical calculation result of Hg1-xCdxTe (x=0.3) avalanche photodiodes (APDs) based on PIN structure is obtained in the paper, which has a ratio of ionization factor k=0.06. The energy dispersion factor and the threshold energy are acquired according to the parameters of material. And the gain, as well as the breakdown voltage, is obtained. The composition, thickness, doping level is calculated theoretically to get an optimized APD device.

Paper Details

Date Published: 8 September 2011
PDF: 8 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81930U (8 September 2011); doi: 10.1117/12.899449
Show Author Affiliations
Ren-jie Gu, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Chuan Shen, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Lu Chen, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

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