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Proceedings Paper

Scanning photocurrent microscopy in single nanowire devices
Author(s): Rion Graham; Chris Miller; Mark Triplett; Dong Yu
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Paper Abstract

Scanning photocurrent microscopy (SPCM) is a powerful technique for investigating local electronic structures and charge transport in semiconductor nanowires. Here we apply this technique to explore colloidal PbSe nanowires and VO2 nanobeams. Field effect transistors incorporating single colloidal PbSe nanowires were fabricated. A fast, sensitive polarization-dependent photoresponse was observed. SPCM of as-grown PbSe nanowires showed a downward band bending towards the metal electrodes, consistent with their p-type nature. At 54 °C, SPCM of VO2 nanobeams revealed band bending at the metallic/insulating domain boundaries. At room temperature, we observed photocurrent spots in the middle of the VO2 nanobeams, indicating local electric fields likely caused by defects.

Paper Details

Date Published: 16 September 2011
PDF: 8 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060K (16 September 2011); doi: 10.1117/12.899410
Show Author Affiliations
Rion Graham, Univ. of California, Davis (United States)
Chris Miller, Univ. of California, Davis (United States)
Mark Triplett, Univ. of California, Davis (United States)
Dong Yu, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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