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Proceedings Paper

Lithium and boron based semiconductors for thermal neutron counting
Author(s): Alireza Kargar; Joshua Tower; Huicong Hong; Leonard Cirignano; William Higgins; Kanai Shah
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Paper Abstract

Thermal neutron detectors in planar configuration were fabricated from LiInSe2 and B2Se3 crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. Pulse height spectra were collected from 241AmBe (neutron source on all samples), as well as 137Cs and 60Co gamma ray sources. In this study, the resistivity of all crystals is reported and the collected pulse height spectra are presented for fabricated devices. Note that, the 241AmBe neutron source was custom designed with polyethylene around the source as the neutron moderator, mainly to thermalize the fast neutrons before reaching the detectors. Both LiInSe2 and B2Se3 devices showed response to thermal neutrons of the 241AmBe source.

Paper Details

Date Published: 28 September 2011
PDF: 8 pages
Proc. SPIE 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII, 81421P (28 September 2011); doi: 10.1117/12.899363
Show Author Affiliations
Alireza Kargar, Radiation Monitoring Devices, Inc. (United States)
Joshua Tower, Radiation Monitoring Devices, Inc. (United States)
Huicong Hong, Radiation Monitoring Devices, Inc. (United States)
Leonard Cirignano, Radiation Monitoring Devices, Inc. (United States)
William Higgins, Radiation Monitoring Devices, Inc. (United States)
Kanai Shah, Radiation Monitoring Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 8142:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII
Larry A. Franks; Ralph B. James; Arnold Burger, Editor(s)

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