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Proceedings Paper

Research on neutron-irradiated 6H-SiC crystals by x-ray diffraction
Author(s): Wei Zhu; Yongfeng Ruan; Pengfei Wang; Li Huang; Pengfei Ma; Jian Liu
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Paper Abstract

Single crystal SiC has become more and more important semiconductor material due to its excellent physical and chemical properties. The present paper reports a study of characteristics of unirradiated and irradiated SiC. 6H-SiC single crystals were irradiated at approximately 60-80oC to a neutron fluence of 5.74×1018 n/cm2.The radiation damage and the defect recovery in the single crystals were investigated by X-ray diffraction meter. The experimental observation on diffraction peaks of different crystal faces shows that there are serious damages in the neutron-irradiated 6H-SiC crystals and amorphization appears at one of the measured planes. The restoration of radiation damage occurred during the isochronal annealing process, and the recovery feature is depended on annealing temperature. The X-ray diffraction data show that the radiation damages remained almost unchanged below the temperature of 600oC, and the healing process got more and more obvious while the annealing temperature is beyond 600oC. It is found that beyond 600oC the crystal structure gradually reordered and the FWHM of face (006) peak reveals a linear recovery behavior with increasing annealing temperature. High-temperature detector can be made according to the linear recovery law in order to achieve the measurement of the high-temperature environment.

Paper Details

Date Published: 8 September 2011
PDF: 10 pages
Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 81910E (8 September 2011); doi: 10.1117/12.899285
Show Author Affiliations
Wei Zhu, Tianjin Univ. (China)
Tianjin Univ. of Commerce (China)
Yongfeng Ruan, Tianjin Univ. (China)
Pengfei Wang, Tianjin Univ. (China)
Li Huang, Tianjin Univ. (China)
Pengfei Ma, Henan Normal Univ. (China)
Jian Liu, Huawei Co. (China)

Published in SPIE Proceedings Vol. 8191:
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies
Yuelin Wang; Huikai Xie; Yufeng Jin, Editor(s)

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