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Proceedings Paper

193-nm radiation durability study of MoSi binary mask and resulting lithographic performance
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Paper Abstract

Dimensions on mask continue to shrink to keep up with the ITRS roadmap. This has implications on the material of choice for the blanks. For example, the new binary OMOG stack (Opaque MOSi on Glass) was successfully introduced to meet the mask specifications at the 32nm technology node. Obviously 193-nm optical lithography will be further used in production at even higher NA and lower k1 emphasizing, for example, the impact on wafer of any electromagnetic field migration effects. Indeed, long term radiation damage inducing CD growth and consequently, device yield loss, has already been reported [1, 2]. This mechanism, known as Electric Field induced Migration of chrome (EMF) often shortens the mask's lifetime. Here, a study was conducted to investigate the impact of intensive ArF scanner exposure both on final wafer and mask performances. The Si printed wafers measured with top-down CD-SEM were characterized with respect to CD uniformity, linearity, Sub Resolution Assist Feature (SRAF) printability through process window, MEEF, DOF, and OPC accuracy. The data was also correlated to advanced mask inspection results (e.g. AIMSTM) taken at the same location. More precisely, this work follows a preliminary study [1] which pointed out that OMOG is less sensitive to radiation than standard COG (Chrome On Glass). And, in this paper, we report on results obtained at higher energy to determine the ultimate lifetime of OMOG masks.

Paper Details

Date Published: 19 May 2011
PDF: 9 pages
Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 80810X (19 May 2011); doi: 10.1117/12.899173
Show Author Affiliations
Isabelle Servin, CEA-LETI MINATEC (France)
Jérôme Belledent, CEA-LETI MINATEC (France)
Laurent Pain, CEA-LETI MINATEC (France)
Brid Connolly, Toppan Photomasks, Inc. (Germany)
Martin Sczyrba, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Matt Lamantia, Toppan Photomasks Inc. (United States)

Published in SPIE Proceedings Vol. 8081:
Photomask and Next-Generation Lithography Mask Technology XVIII
Toshio Konishi, Editor(s)

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