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Proceedings Paper

A cryogenic temperature eight-cell CMOS differential current amplifier for IR detectors
Author(s): Honghui Yuan; YongPing Chen; ShiJun Chen; Qiang Liu; Xing Xu
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Paper Abstract

In order to make medium-long wave HgCdTe IR detector work normally it must be in zero bias voltage, the differential input current preamplifier can easily make HgCdTe IR detector biased at zero voltage. Because IR signals are often very weak, then little disturb can affect the performance of the total detector system very much. In order to achieve high Signal-to-Noise ratio, it is expected that the differential input current preamplifier can be designed to work as close as to the HgCdTe IR detector. That is to say the preamplifier can also work normally at 77K. In this paper, a high-performance low-noise differential input current preamplifier working at cryogenic temperature for HgCdTe IR detectors is designed. Since a differential input folded-cascode structure has been used in the preamplifier's design, it makes that the gain of single stage amplifier can arrive 60dB, the circuit uses high resistant poly as feedback resistance so that 40 MΩ feedback resistance can be integrated on chip at temperature 77k ,which can directly transforms IR detector's current to voltage, avoiding the additional noise by using exterior resister. The preamplifier's noise characteristics were analyzed and the methods for decreasing noise were proposed. This differential input current preamplifier was implemented in 0.5μm CMOS process. The size of eight-cell chip is 3mm×1.9mm. The test result shows that the current preamplifier has good performance at the temperature of 77K. Within the bandwidth of 3.3KHz, the total output voltage noise is 120uV, the equivalent total input noise voltage is 3PA, the equivalent input noise current is 0.03pA/Hz1/2@100Hz. The preamplifier power consumption is less than 1mW at 77K. When the input current is less than 10nA, its linearity has been reached 99%. This circuit can work normally at temperature between 300K to 77K and it can be used for several bands of IR detector. Finally, it can work normally either by ±2 or by ±1.5 voltage power supply. This current preamplifier has been successfully applied in the signal readout of HgCdTe IR detectors for infrared imaging.

Paper Details

Date Published: 8 September 2011
PDF: 9 pages
Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81930P (8 September 2011); doi: 10.1117/12.899162
Show Author Affiliations
Honghui Yuan, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
YongPing Chen, Shanghai Institute of Technical Physics (China)
ShiJun Chen, Shanghai Institute of Technical Physics (China)
Qiang Liu, Shanghai Institute of Technical Physics (China)
Xing Xu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8193:
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications
Jeffery J. Puschell; Junhao Chu; Haimei Gong; Jin Lu, Editor(s)

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