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Proceedings Paper

Dry etching technologies for the advanced binary film
Author(s): Yoshinori Iino; Makoto Karyu; Hirotsugu Ita; Tomoaki Yoshimori; Hidehito Azumano; Makoto Muto; Mikio Nonaka
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Paper Abstract

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Paper Details

Date Published: 14 October 2011
PDF: 6 pages
Proc. SPIE 8166, Photomask Technology 2011, 81663W (14 October 2011); doi: 10.1117/12.898976
Show Author Affiliations
Yoshinori Iino, Shibaura Mechatronics Corp. (Japan)
Makoto Karyu, Shibaura Mechatronics Corp. (Japan)
Hirotsugu Ita, Shibaura Mechatronics Corp. (Japan)
Tomoaki Yoshimori, Shibaura Mechatronics Corp. (Japan)
Hidehito Azumano, Shibaura Mechatronics Corp. (Japan)
Makoto Muto, Shibaura Mechatronics Corp. (Japan)
Mikio Nonaka, Shibaura Mechatronics Corp. (Japan)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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