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Proceedings Paper

The trade-offs between thin and thick absorbers for EUV photomasks
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Paper Abstract

Through a series of experiments and simulation studies, this paper will explore the lithographic impact of absorber thickness choice on an EUV photomask and highlight the trade-offs that exist between thick and thin absorbers. Fundamentally, thinning the absorber modifies the intensity and phase of light reflected from the absorber while simultaneously decreasing in the influence of feature edge topography. The decision to deploy a thinner absorber depends on which imaging effect has a smaller impact after practical mitigation and correction strategies are employed. These effects and the ability to correct for them are investigated by evaluating the absorber thickness impact on lithographic imaging performance, stray light effects, topography effects, and CD variability. Although various tradeoffs are described, it is generally concluded that thinning the absorber thickness below around 68 nm is not recommended for a TaBN/TaBO absorber stack.

Paper Details

Date Published: 14 October 2011
PDF: 14 pages
Proc. SPIE 8166, Photomask Technology 2011, 81663U (14 October 2011); doi: 10.1117/12.898912
Show Author Affiliations
Gregory McIntyre, IBM Advanced Lithography Research (United States)
Christian Zuniga, Mentor Graphics (United States)
Emily Gallagher, IBM Photomask Development (United States)
John Whang, IBM Photomask Development (United States)
Louis Kindt, IBM Photomask Development (United States)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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