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Proceedings Paper

Advanced electron beam resist requirements and challenges
Author(s): Andrew Jamieson; Yong Kwan Kim; Bennett Olson; Maiying Lu; Nathan Wilcox
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Paper Abstract

As photomask minimum feature size requirements continue to shrink, resist resolution limitations and their tradeoffs with exposure dose are critical factors. Recently, nearly every node needs a new electron beam resist, customized for exposure dose requirements while simultaneously meeting resolution specifications. Intel Mask Operations has an active program focused on screening new electron beam resists and processes. We discuss the performance metrics we use to evaluate materials and discuss the relative capabilities of the latest resists. We present fundamental resist metrics (resolution, LER and dose) as well as manufacturing process sensitivities.

Paper Details

Date Published: 13 October 2011
PDF: 15 pages
Proc. SPIE 8166, Photomask Technology 2011, 816616 (13 October 2011); doi: 10.1117/12.898901
Show Author Affiliations
Andrew Jamieson, Intel Corp. (United States)
Yong Kwan Kim, Intel Corp. (United States)
Bennett Olson, Intel Corp. (United States)
Maiying Lu, Intel Corp. (United States)
Nathan Wilcox, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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