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Proceedings Paper

Phase defect analysis with actinic full-field EUVL mask blank inspection
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Paper Abstract

We had developed an actinic full-field inspection system to detect multilayer phase-defects with dark field imaging. Regarding the actinic inspection of native defects, the influence of the defect's surface dimension and multilayer structure, on the intensity-signal obtained from the inspection was analyzed. Three mask blanks were inspected from which 55 defects, observed with AFM and SEM, were classified as amplitude-defects or phase-defects. The surface dimensions and SEVDs (sphere equivalent volume diameters) of the defects were measured with the AFM. In the case where their SEVDs were same as of the programmed phase-defects, they were found to produce stronger intensitysignals in comparison to the ones from the programmed phase-defects. Cross-sectional multilayer structures of two native phase-defects were observed with TEM, and those defects formed non-conformal structures in the multilayer. This result means that most of the native phase-defects tend to form a non-conformal structure, and can make large impact on the wafer image in comparison to the ones from a conformal structure. Besides phase-defects, the actinic inspection also detected amplitude-defects. Although the sensitivities of the amplitude-defects were found to be lower than those of the phase-defects, an amplitude-defect higher than 30 nm could be detected with high probability.

Paper Details

Date Published: 13 October 2011
PDF: 8 pages
Proc. SPIE 8166, Photomask Technology 2011, 81660G (13 October 2011); doi: 10.1117/12.898898
Show Author Affiliations
Takeshi Yamane, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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