Share Email Print
cover

Proceedings Paper

EUVL mask inspection using 193nm wavelength for 30nm node and beyond
Author(s): Jihoon Na; Wonil Cho; Tae-Geun Kim; In-Yong Kang; Byungcheol Cha; Inkyun Shin; Han-Ku Cho
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report inspection results of EUVL masks with 193nm wavelength tools for 30nm and 24nm half-pitch nodes. The dense line and space and contact pattern is considered to study inspection capability. The evaluation includes defect contrast variation depending on illumination conditions, defect types, and design nodes. We show many inspection images with various optic conditions. Consequently, the detection sensitivity is affected by contrast variation of defects. The detection sensitivity and wafer printability are addressed with a programmed defect mask and a production mask. With these results, we want to discuss the capability of current EUVL mask inspection tools and the future direction.

Paper Details

Date Published: 13 October 2011
PDF: 11 pages
Proc. SPIE 8166, Photomask Technology 2011, 81661H (13 October 2011); doi: 10.1117/12.898896
Show Author Affiliations
Jihoon Na, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Wonil Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Tae-Geun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
In-Yong Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byungcheol Cha, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Inkyun Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

© SPIE. Terms of Use
Back to Top