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Proceedings Paper

Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction
Author(s): Kazuyuki Hagiwara; Ingo Bork; Aki Fujimura
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Paper Abstract

Using Model-Based Mask Data Preparation (MB-MDP) complex masks with complex sub-resolution assist features (SRAFs) can be written in practical write times with today's leading-edge production VSB machines by allowing overlapping VSB shots. This simulation-based approach reduces shot count by taking advantage of the added flexibility in being able to overlap shots. The freedom to overlap shots, it turns out, also increases mask fidelity, CDU on the mask, and CDU on the wafer by writing sub-100nm mask features more accurately, and with better dose margin. This paper describes how overlapping shots enhance mask and wafer quality for various sub-100nm features on ArF masks. In addition, this paper describes how EUV mask accuracy can be enhanced uniquely by allowing overlapping shots.

Paper Details

Date Published: 19 May 2011
PDF: 8 pages
Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 80810U (19 May 2011); doi: 10.1117/12.898862
Show Author Affiliations
Kazuyuki Hagiwara, D2S, KK (Japan)
Ingo Bork, D2S, Inc. (United States)
Aki Fujimura, D2S, Inc. (United States)

Published in SPIE Proceedings Vol. 8081:
Photomask and Next-Generation Lithography Mask Technology XVIII
Toshio Konishi, Editor(s)

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