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Proceedings Paper

Total source mask optimization: high-capacity, resist modeling, and production-ready mask solution
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Paper Abstract

As the demand for taking Source Mask Optimization (SMO) technology to the full-chip level is increasing, the development of a flow that overcomes the limitations which hinder this technology's moving forward to the production level is a priority for Litho-Engineers. The aim of this work is to discuss advantages of using a comprehensive novel SMO flow that outperforms conventional techniques in areas of high capacity simulations, resist modeling and the production of a final manufacturable mask. We show results that indicate the importance of adding large number of patterns to the SMO exploration space, as well as taking into account resist effects during the optimization process and how this flow incorporates the final mask as a production solution. The high capacity of this flow increases the number of patterns and their area by a factor of 10 compared to other SMO techniques. The average process variability band is improved up to 30% compared to the traditional lithography flows.

Paper Details

Date Published: 14 October 2011
PDF: 9 pages
Proc. SPIE 8166, Photomask Technology 2011, 81663M (14 October 2011); doi: 10.1117/12.898860
Show Author Affiliations
Moutaz Fakhry, IBM Almaden Research Ctr. (United States)
Yuri Granik, Mentor Graphics Corp. (United States)
Kostas Adam, Mentor Graphics Corp. (United States)
Kafai Lai, IBM Semiconductor Research and Development Ctr. (United States)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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