Share Email Print
cover

Proceedings Paper

Pattern placement error due to resist charging effect at 50kV e-beam writer: mechanism and its correction
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

By the development of double exposure technique and the EUV lithography the pattern placement error of photomask is interested because of its impact on size and position of wafer pattern. Among various sources to induce the pattern placement error, we have focused on the resist charging effect and shown that the resist charging effect generates pattern position error and CD variation. Based on experiment and simulation, we present quantitatively the dependence of position error on pattern density, pattern shape, and writing order. Furthermore, we have discussed the model to describe the charging effect and its agreement with experiment, and correction method to remove the resist charging effect.

Paper Details

Date Published: 13 October 2011
PDF: 12 pages
Proc. SPIE 8166, Photomask Technology 2011, 81661Z (13 October 2011); doi: 10.1117/12.898856
Show Author Affiliations
Jin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Suk Jong Bae, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hee Bom Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
B. G. Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

© SPIE. Terms of Use
Back to Top