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Proceedings Paper

Study of EUV mask e-beam inspection conditions for HVM
Author(s): Shmoolik Mangan; C. C. Lin; Greg Hughes; Ran Brikman; Alex Goldenshtein; Vlad Kudriashov; Alon Litman; Lior Shoval; Ilan Englard
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Paper Abstract

Extreme ultraviolet (EUV) e-beam patterned mask inspection (EBPMI) has been proposed by Applied Materials as a cost-effective solution for high volume manufacturing (HVM) in mask shops and fabs. Electron beam inspection technology is currently available for wafers. A recent publication described a successful sensitivity study of EUVs mask using a technology demonstration platform. Here we present a new study using extreme e-beam conditions to show the feasibility of using EBPMI in HVM. We examine potential changes in the reflectivity at the EUV wavelength after exposure to high e-beam currents, demonstrating that reflectivity does not change due to e-beam scanning. We therefore conclude that under the conditions tested, which include typical as well as extreme conditions, there is no evidence of mask damage.

Paper Details

Date Published: 24 January 2012
PDF: 8 pages
Proc. SPIE 8166, Photomask Technology 2011, 816631 (24 January 2012); doi: 10.1117/12.898854
Show Author Affiliations
Shmoolik Mangan, Applied Materials (Israel)
C. C. Lin, SEMATECH (United States)
Greg Hughes, SEMATECH (United States)
Ran Brikman, Applied Materials (Israel)
Alex Goldenshtein, Applied Materials (Israel)
Vlad Kudriashov, Applied Materials (Israel)
Alon Litman, Applied Materials (Israel)
Lior Shoval, Applied Materials (Israel)
Ilan Englard, Applied Materials (Israel)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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