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Proceedings Paper

The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-contours from wafer and mask
Author(s): Daisuke Hibino; Hiroyuki Shindo; Yutaka Hojyo; Thuy Do; Aasutosh Dave; Timothy Lin; Ir Kusnadi; John L. Sturtevant
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Paper Abstract

Optical Proximity Correction (OPC) becomes complicated, shrinking a design rule. As a result, measurement points have increased, and improving the OPC model quality has become more difficult. To improve OPC simulation cost, Contour-based OPC-modeling is superior to CD-based, because Contour-based shape based rich information. Hence, Contour-based OPC-modeling is imperative in the next generation lithography, as reported in SPIE2010[5]. In this study, Mask SEM-contours were input into OPC model calibration in order to verify the impact of mask pattern shape on the quality of the OPC model. Advanced SEM contouring technology was applied to both of Wafer CD-SEM and Mask CD-SEM in examining the effectiveness of OPC model calibration. The evaluation results of the model quality will be reported. The advantage of Contour based OPC modeling using Wafer SEM-Contour and Mask SEM-Contour in the next generation computational lithography will be discussed.

Paper Details

Date Published: 13 October 2011
PDF: 9 pages
Proc. SPIE 8166, Photomask Technology 2011, 81661S (13 October 2011); doi: 10.1117/12.898843
Show Author Affiliations
Daisuke Hibino, Hitachi High-Technologies Corp. (Japan)
Hiroyuki Shindo, Hitachi High-Technologies Corp. (Japan)
Yutaka Hojyo, Hitachi High-Technologies Corp. (Japan)
Thuy Do, Mentor Graphics Corp. (United States)
Aasutosh Dave, Mentor Graphics Corp. (United States)
Timothy Lin, Mentor Graphics Corp. (United States)
Ir Kusnadi, Mentor Graphics Corp. (United States)
John L. Sturtevant, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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