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Proceedings Paper

Clean and repair of EUV photomasks
Author(s): Tod Robinson; Daniel Yi; David Brinkley; Ken Roessler; Roy White; Ron Bozak; Mike Archuletta; David Lee
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Paper Abstract

Regardless at what technology node it will be implemented, extreme ultraviolet (EUV) lithography appears to be the most likely candidate to succeed 193 nm wavelength lithography. However, EUV photomasks present new and different challenges for both repair and clean processes. Among these are different and more complex materials, greater sensitivity to smaller topography differences, and lack of pelliclization to protect critical pattern areas. Solutions developed and recently refined to meet these challenges are reviewed as an integrated solution to make the manufacture and maintenance of this mask type feasible. This proven, integrated solution includes nanomachining, BitClean® and cryogenic clean processes applied for hard (missing pattern) and soft (nanoparticle) defect removals with no damage to underlying multilayers.

Paper Details

Date Published: 13 October 2011
PDF: 10 pages
Proc. SPIE 8166, Photomask Technology 2011, 81661J (13 October 2011); doi: 10.1117/12.898503
Show Author Affiliations
Tod Robinson, RAVE LLC (United States)
Daniel Yi, RAVE LLC (United States)
David Brinkley, RAVE LLC (United States)
Ken Roessler, RAVE LLC (United States)
Roy White, RAVE LLC (United States)
Ron Bozak, RAVE LLC (United States)
Mike Archuletta, RAVE LLC (United States)
David Lee, RAVE LLC (United States)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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