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Proceedings Paper

Absolute thickness measurement of silicon wafer using wavelength scanning interferometer
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Paper Abstract

Wavelength scanning interferometry based on a reflectometry model is proposed for measuring the absolute thickness profile of a thin silicon wafer. A Fourier-based method of wavelength scanning interferometry is limited to thicker wafers because of a tuning range limitation of the source. As an example, the minimum thickness measurable with the conventional Fourier-based technique using a 4 nm-tunable (500 GHz) 1550 nm laser is approximately 170 μm. Our proposed method enables an extension of thickness measurements with a reduction in systematic measurement error, representing a significant advance. The so-called 'ripple-error' or 'fringe-bleed through' is much lower with a reflectometry-based analysis compared to a Fourier-based analysis. Our method was verified by measuring and testing several wafers with various thicknesses.

Paper Details

Date Published: 14 September 2011
PDF: 6 pages
Proc. SPIE 8133, Dimensional Optical Metrology and Inspection for Practical Applications, 813312 (14 September 2011); doi: 10.1117/12.898354
Show Author Affiliations
Young-Sik Ghim, Korea Research Institute of Standards and Science (Korea, Republic of)
The Univ. of North Carolina at Charlotte (United States)
Amit Suratkar, The Univ. of North Carolina at Charlotte (United States)
Angela Davies, The Univ. of North Carolina at Charlotte (United States)
Yun-Woo Lee, Korea Research Institute of Standards and Science (Korea, Republic of)


Published in SPIE Proceedings Vol. 8133:
Dimensional Optical Metrology and Inspection for Practical Applications
Kevin G. Harding; Peisen S. Huang; Toru Yoshizawa, Editor(s)

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