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Proceedings Paper

Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs
Author(s): A. Sellai; A. Mesli; P. Kruszewski; A. R. Peaker; M. Missous
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Paper Abstract

We have studied using frequency and temperature dependent admittance some electronic properties of InAs QDs embedded in a GaAs structure. The presence of QDs in our structure is evidenced in the C-V characteristics at all temperatures and frequencies by a plateau-like structure that is related to charging and discharging of QDs. Concurrently, the conductance shows a manifest peak in a certain bias range for temperatures below 150K. The conductance dependence on both temperature and applied bias reveal two different mechanisms of carrier escape from the QDs. Moreover, the conductance data at a given frequency was used to estimate rates and activation energies in association with the electron escape mechanisms from the QDs.

Paper Details

Date Published: 7 September 2011
PDF: 7 pages
Proc. SPIE 8094, Nanophotonic Materials VIII, 80940S (7 September 2011); doi: 10.1117/12.897856
Show Author Affiliations
A. Sellai, Sultan Qaboos Univ. (Oman)
A. Mesli, IM2NP, CNRS, Aix-Marseille Univ. (France)
P. Kruszewski, Institute of Physics Polish Academy of Sciences (Poland)
A. R. Peaker, The Univ. of Manchester (United Kingdom)
M. Missous, The Univ. of Manchester (United Kingdom)

Published in SPIE Proceedings Vol. 8094:
Nanophotonic Materials VIII
Stefano Cabrini; Taleb Mokari, Editor(s)

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