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Proceedings Paper

Growth mechanism and inhibition technologies of a contamination on the surface of photomask for longtime LCD-TFT lithography process
Author(s): Makoto Murai; Masayoshi Tsuchiya; Hiroyuki Shinchi; Terumasa Hirano; Shintaro Kitajima; Yasushi Kaneko; Takahisa Kimoto; Shigeki Takayama
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Paper Abstract

Recently, the progressive contamination of photomasks has become a major concern for long-term LCD-TFT manufacturing, as it is the cause of significant defects. We have deciphered the chemical structure and growth mechanism of progressive contamination, and have devised an accelerated test procedure which simulates 2 years of TFT processes in order to determine how best to inhibit its growth (UG Series). By using the photomask with a new type of pellicle (UG series), we were able to inhibit the growth of progressive contamination to the extent that no contamination was confirmed on the photomask for approximately two years.

Paper Details

Date Published: 22 April 2011
PDF: 7 pages
Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 808105 (22 April 2011); doi: 10.1117/12.897698
Show Author Affiliations
Makoto Murai, Hoya Corp. (Japan)
Masayoshi Tsuchiya, Hoya Corp. (Japan)
Hiroyuki Shinchi, Hoya Corp. (Japan)
Terumasa Hirano, Hoya Corp. (Japan)
Shintaro Kitajima, Asahi-Kasei E-materials Corp. (Japan)
Yasushi Kaneko, Asahi-Kasei E-materials Corp. (Japan)
Takahisa Kimoto, Asahi-Kasei E-materials Corp. (Japan)
Shigeki Takayama, Asahi-Kasei E-materials Corp. (Japan)

Published in SPIE Proceedings Vol. 8081:
Photomask and Next-Generation Lithography Mask Technology XVIII
Toshio Konishi, Editor(s)

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