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Proceedings Paper

Properties and spectroscopic performance of semiconductor detectors under high-flux irradiation
Author(s): M. L. Rodrigues; Z. He
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Paper Abstract

In recent years, operation of wide band-gap semiconductor detectors under high-flux irradiation in medical and security applications has called the attention of the scientific commnity. However, under high-flux irradiation, these detectors are limited by poor hole transport properties and other factors. In our studies, the build up of space charge as a function of time has been systematically investigated through direct comparison between experiments and charge transport simulations. In order to benchmark and calibrate our simulations, charge transport properties of CdZnTe detectors used in high-flux experiments were measured. Our results show that the polarization effect, caused by the build up of positive space charge as a function of time, initially distorts and eventually causes complete breakdown of the operating electric field.

Paper Details

Date Published: 22 September 2011
PDF: 11 pages
Proc. SPIE 8143, Medical Applications of Radiation Detectors, 81430A (22 September 2011); doi: 10.1117/12.897500
Show Author Affiliations
M. L. Rodrigues, Univ. of Michigan (United States)
Z. He, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 8143:
Medical Applications of Radiation Detectors
H. Bradford Barber; Hans Roehrig; Douglas J. Wagenaar, Editor(s)

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