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Proceedings Paper

Silicon nanowire solar cells with a-Si heterojunction showing 7.3% efficiency
Author(s): Fritz Falk; Guobin Jia; Gudrun Andrä; Ingo Sill; Nikolay Petkov
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Paper Abstract

Core-shell silicon nanowire (SiNW) solar cells with an a-Si heterojunction were prepared on SiNW arrays, which were etched into n-type silicon wafers or into n-doped multicrystalline silicon thin films on glass substrates. A stack of intrinsic and p-doped hydrogenated a-Si was deposited as a shell around the SiNWs by PECVD, acting as a heteroemitter of the solar cells. Finally a TCO layer consisting of aluminum doped zinc oxide was deposited on top of the a-Si by atomic layer deposition. In a mesa-structured solar cell (area 7 mm2) an open circuit voltage of 476 mV and an efficiency of 7.3% were achieved under AM 1.5 illumination. Electron beam induced current measurements show clear evidence that most of the photo-current comes from the thin SiNW layer.

Paper Details

Date Published: 21 September 2011
PDF: 8 pages
Proc. SPIE 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II, 81110Q (21 September 2011); doi: 10.1117/12.897369
Show Author Affiliations
Fritz Falk, Institut für Photonische Technologien e.V. (Germany)
Guobin Jia, Institut für Photonische Technologien e.V. (Germany)
Gudrun Andrä, Institut für Photonische Technologien e.V. (Germany)
Ingo Sill, Institut für Photonische Technologien e.V. (Germany)
Nikolay Petkov, Tyndall National Institute (Ireland)


Published in SPIE Proceedings Vol. 8111:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II
Loucas Tsakalakos, Editor(s)

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