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Proceedings Paper

Printability of native blank defects and programmed defects and their stack structures
Author(s): Hyuk Joo Kwon; Jenah Harris-Jones; Ranganath Teki; Aaron Cordes; Toshio Nakajima; Iacopo Mochi; Kenneth A. Goldberg; Yuya Yamaguchi; Hiroo Kinoshita
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Paper Abstract

We describe the characterization of native phase defects in the manufacturing of extreme ultraviolet (EUV) mask blanks using the state-of-the-art mask metrology equipment in SEMATECH's Mask Blank Development Center (MBDC). We used commercially available quartz substrates and deposited Mo/Si multilayers on the substrates to characterize phase defects. We also prepared programmed defects of various dimensions using e-beam patterning technology on which multilayers were deposited. Transmission electron microscopy (TEM) was used to study multilayer profile changes, while SEMATECH's actinic inspection tool (AIT) was used to image defects and predict their printability. Defect images at different focal depths of the AIT are correlated to TEM cross sections and atomic force microscopy (AFM) dimensions. The printability of native and programmed defects was also investigated.

Paper Details

Date Published: 13 October 2011
PDF: 10 pages
Proc. SPIE 8166, Photomask Technology 2011, 81660H (13 October 2011); doi: 10.1117/12.897165
Show Author Affiliations
Hyuk Joo Kwon, SEMATECH (United States)
Jenah Harris-Jones, SEMATECH (United States)
Ranganath Teki, SEMATECH (United States)
Aaron Cordes, SEMATECH (United States)
Toshio Nakajima, AGC Electronics America (United States)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Yuya Yamaguchi, Univ. of Hyogo (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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