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Proceedings Paper

Residual stress analysis for oxide thin film deposition on flexible substrate using finite element method
Author(s): Hsi-Chao Chen; Chen-Yu Huang; Ssu-Fan Lin; Sheng-Hui Chen
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Paper Abstract

Residual or internal stresses directly affect a variety of phenomena including adhesion, generation of crystalline defects, perfection of epitaxial layers and formation of film surface growths such as hillocks and whiskers. Sputtering oxide films with high density promote high compressive stress, and it offers researchers a reference if the value of residual stress could be analyzed directly. Since, the study of residual stress of SiO2 and Nb2O5 thin film deposited by DC magnetron sputtered on hard substrate (BK7) and flexible substrate (PET and PC). A finite element method (FEM) with an equivalent-reference-temperature (ERT) technique had been proposed and used to model and evaluate the intrinsic strains of layered structures. The research has improved the equivalent reference temperature (ERT) technique of the simulation of intrinsic strain for oxygen film. The results have also generalized two models connecting to the lattice volume to predict the residual stress of hard substrate and flexible substrate with error of 3% and 6%, respectively.

Paper Details

Date Published: 3 October 2011
PDF: 8 pages
Proc. SPIE 8168, Advances in Optical Thin Films IV, 816820 (3 October 2011); doi: 10.1117/12.897021
Show Author Affiliations
Hsi-Chao Chen, National Yunlin Univ. of Science and Technology (Taiwan)
National Central Univ. (Taiwan)
Chen-Yu Huang, National Yunlin Univ. of Science and Technology (Taiwan)
Ssu-Fan Lin, National Yunlin Univ. of Science and Technology (Taiwan)
Sheng-Hui Chen, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8168:
Advances in Optical Thin Films IV
Michel Lequime; H. Angus Macleod; Detlev Ristau, Editor(s)

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