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Proceedings Paper

Hot spot detection for indecomposable self-aligned double patterning layout
Author(s): Hongbo Zhang; Yuelin Du; Martin D. F. Wong; Rasit O. Topaloglu
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Paper Abstract

Self-aligned double patterning (SADP) lithography is a novel lithography technology which has the capability to define critical dimension (CD) using one single exposure, therefore holding a great opportunity for the next generation lithography process for the overlay mitigation. However, a necessary design manufacturing co-optimization step - the non-decomposability position detection (hot spot detection) - is still immature. In this paper, targeting the hot spot detection difficulties in SADP process, we first revisit out previous ILP-based SADP decomposition algorithm and provide an extended ILP-based hot spot detection without any preconditions on the design. Then, with some simple requirement that is commonly seen in 2D random layout, we further provided a graph based hot spot detection for an efficient hot spot detection. From the Nangate standard cell library, our experiment validates the hot spot detection process and demonstrates an SADP friendly design tyle is necessary for the upcoming 14nm technology node.

Paper Details

Date Published: 13 October 2011
PDF: 10 pages
Proc. SPIE 8166, Photomask Technology 2011, 81663E (13 October 2011); doi: 10.1117/12.896990
Show Author Affiliations
Hongbo Zhang, Univ. of Illinois at Urbana-Champaign (United States)
Yuelin Du, Univ. of Illinois at Urbana-Champaign (United States)
Martin D. F. Wong, Univ. of Illinois at Urbana-Champaign (United States)
Rasit O. Topaloglu, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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