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Proceedings Paper

Carrier transportation properties in M-p-n and Schottky CdTe diode detector
Author(s): Manato Kimura; Akifumi Koike; Takaharu Okunoayama; Hisashi Morii; Shailendra Singh; Toshitaka Yamakawa; Hidenori Mimura; Toru Aoki
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Paper Abstract

The photon counting CdTe detector by using pulse rise height for high count rate detection was developed. The detector can measure not only pulse rise height for energy estimation but also pulse rise time. The energy spectrum after polarization in high bias voltage and before polarization in low bias voltage was so similar, but the pulse rise time was difference. In this paper, we have compared polarization properties of M-p-n type CdTe diode and Schottky one. We will estimate changing internal electric field by using this measurement.

Paper Details

Date Published: 28 September 2011
PDF: 8 pages
Proc. SPIE 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII, 81421D (28 September 2011); doi: 10.1117/12.896969
Show Author Affiliations
Manato Kimura, Shizuoka Univ. (Japan)
ANSeeN Inc. (Japan)
Akifumi Koike, Shizuoka Univ. (Japan)
ANSeeN Inc. (Japan)
Takaharu Okunoayama, ANSeeN Inc. (Japan)
Hisashi Morii, Shizuoka Univ. (Japan)
Shailendra Singh, Shizuoka Univ. (Japan)
Toshitaka Yamakawa, Shizuoka Univ. (Japan)
Hidenori Mimura, Shizuoka Univ. (Japan)
Toru Aoki, Shizuoka Univ. (Japan)
ANSeeN Inc. (Japan)


Published in SPIE Proceedings Vol. 8142:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII
Larry A. Franks; Ralph B. James; Arnold Burger, Editor(s)

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