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Proceedings Paper

Growth of semimetallic ErAs films epitaxially embedded in GaAs
Author(s): Adam M. Crook; Hari P. Nair; Jong Ho Lee; Domingo A. Ferrer; Deji Akinwande; Seth R. Bank
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Paper Abstract

We present models for the growth and electrical conductivity of ErAs films grown with the nanoparticle-seeded film growth technique. This growth mode overcomes the mismatch in rotational symmetry between the rocksalt ErAs crystal structure and the zincblende GaAs crystal structure. This results in films of ErAs grown through a thin film of GaAs that preserves the symmetry of the substrate. The conductivity of the films, as a function of film thickness, are investigated and a surface roughness model is used to explain observed trends. Transmission electron micrographs confirm the suppression of anti-phase domains. A simple diffusion model is developed to describe the diffusion and incorporation of surface erbium into subsurface ErAs layers and predict potential failure mechanisms of the growth method.

Paper Details

Date Published: 16 September 2011
PDF: 7 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060R (16 September 2011); doi: 10.1117/12.896938
Show Author Affiliations
Adam M. Crook, The Univ. of Texas at Austin (United States)
Hari P. Nair, The Univ. of Texas at Austin (United States)
Jong Ho Lee, The Univ. of Texas at Austin (United States)
Domingo A. Ferrer, The Univ. of Texas at Austin (United States)
Deji Akinwande, The Univ. of Texas at Austin (United States)
Seth R. Bank, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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