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Proceedings Paper

Compositional grading of InxGa1-xAs/GaAs tunnel junctions enhanced by ErAs nanoparticles
Author(s): R. Salas; E. M. Krivoy; A. M. Crook; H. P. Nair; S. R. Bank
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Paper Abstract

We investigate the electrical conductivity of GaAs-based tunnel junctions enhanced with semimetallic ErAs nanoparticles. In particular, we examine the effects of digitally-graded InGaAs alloys on the n-type side of the tunnel junction, along with different p-type doping levels. Device characteristics of the graded structures indicate that the n-type Schottky barrier may not be the limiting factor in the tunneling current as initially hypothesized. Moreover, significantly improved forward and reverse bias tunneling currents were observed with increased p-type doping, suggesting p-side limitation.

Paper Details

Date Published: 16 September 2011
PDF: 6 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060P (16 September 2011); doi: 10.1117/12.896937
Show Author Affiliations
R. Salas, The Univ. of Texas at Austin (United States)
E. M. Krivoy, The Univ. of Texas at Austin (United States)
A. M. Crook, The Univ. of Texas at Austin (United States)
H. P. Nair, The Univ. of Texas at Austin (United States)
S. R. Bank, The Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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