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Proceedings Paper

The evolution of pattern placement metrology for mask making
Author(s): Dirk Beyer; Norbert Rosenkranz; Carola Blaesing-Bangert
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Paper Abstract

The image placement is and remains an important aspect of photomask metrology. Not only the position accuracy of features for an individual mask - representing one layer in a complete chip design have to meet stringent requirements, the complete mask set for all layers have to match in order to get a functional device. At a time were registration and overlay errors were counted in micrometer it was enough to compare one mask with another by a so called overlay machine. This approach works sufficiently until placement specification reached the "nanometre range" and the development of dedicated 2D coordinate measurement systems became necessary. Since then, pattern placement metrology tools became "enabler" for the continuous improvement of pattern placement accuracy on photomask and the improvement of the final wafer overlay error. This paper reviews and discuss current trends of pattern placement metrology on photomasks, highlighting the major error drivers and will focus on current and future requirements for in - die registration.

Paper Details

Date Published: 1 April 2011
PDF: 9 pages
Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850D (1 April 2011); doi: 10.1117/12.896892
Show Author Affiliations
Dirk Beyer, Carl Zeiss SMS GmbH (Germany)
Norbert Rosenkranz, Carl Zeiss SMS GmbH (Germany)
Carola Blaesing-Bangert, Carl Zeiss SMS GmbH (Germany)

Published in SPIE Proceedings Vol. 7985:
27th European Mask and Lithography Conference
Uwe F.W. Behringer, Editor(s)

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