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Proceedings Paper

EUV actinic mask blank defect inspection: results and status of concept realization
Author(s): Aleksey Maryasov; Stefan Herbert; Larissa Juschkin; Rainer Lebert; Klaus Bergmann
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Paper Abstract

One of the most challenging requirements for the next generation EUV lithography is an extremely low amount of critically sized defects on mask blanks. Fast and reliable inspection of mask blanks is still a challenge. Here we present the current status of the development of our actinic Schwarzschild objective based microscope operating in dark field with EUV discharge produced plasma source. For characterization of the microscope performance, several programmed defect structures - artificial pits and bumps were created on top of multilayer mirror (ML) surfaces and investigated both with EUV microscope and atomic force microscope (AFM). Defect size sensitivity of actinic inspection in dark field mode without resolving the defects is under study. The dependency between defect shape, size and position in relation to the ML surface and its scattering signal will be discussed. Furthermore, first results of a defect mapping algorithm are presented.

Paper Details

Date Published: 1 April 2011
PDF: 8 pages
Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850C (1 April 2011); doi: 10.1117/12.896890
Show Author Affiliations
Aleksey Maryasov, RWTH Aachen Univ. (Germany)
Stefan Herbert, RWTH Aachen Univ. (Germany)
Larissa Juschkin, RWTH Aachen Univ. (Germany)
Rainer Lebert, Bruker Advanced Supercon GmbH (Germany)
Klaus Bergmann, Fraunhofer Institute for Laser Technology (Germany)


Published in SPIE Proceedings Vol. 7985:
27th European Mask and Lithography Conference
Uwe F.W. Behringer, Editor(s)

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