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Proceedings Paper

NGL masks: development status and issue
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Paper Abstract

Semiconductor lithography candidates toward 2xnm node and beyond include wide variety of options, such as extension of 193i, EUVL, NIL, and ML2. Most of those candidates, except ML2, need critical mask feature to realize effective high volume manufacturing. In this presentation, EUVL mask technology update and future issues will be presented.

Paper Details

Date Published: 1 April 2011
PDF: 9 pages
Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798505 (1 April 2011); doi: 10.1117/12.896886
Show Author Affiliations
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Takeya Shimomura, DNP Corp. USA (United States)
Yuichi Inazuki, Dai Nippon Printing Co., Ltd. (Japan)
Tadahiko Takikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7985:
27th European Mask and Lithography Conference
Uwe F.W. Behringer, Editor(s)

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